Перегляд за автором "Mustafaeva, S.N."

Сортувати за: Порядок: Результатів:

  • Mustafaeva, S.N.; Asadov, S.M.; Guseinov, D.T.; Kasimoglu, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The results of high-frequency dielectric measurements with obtained α-CuInSe₂ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density ...
  • Mustafaeva, S.N.; Ismailov, A.A.; Akhmedzade, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Injection currents are studied in high-resistive layer of TlInS2 single crystals and the following parameters were determined: equilibrium concentration of charge carriers in the allowed band p0 = 1.67⋅10¹⁰ cm⁻³; concentration ...
  • Mustafaeva, S.N.; Asadov, M.M.; Qahramanov, K.Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > ...
  • Mustafaeva, S.N.; Asadov, M.M.; Guseinov, D.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Comparative analysis of the X-ray dosimetric characteristics of CdGa₂S₄ and CdGa₂S₄<Cu> single crystals demonstrates that after copper-doping the persistence of the crystal characteristics completely disappears. The ...